The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Aug. 13, 2001
Jack A. Mandelman, Stormville, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Bomy A. Chen, Ridgefield, CT (US);
Oleg Gluschenkov, Wappingers Falls, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Victor Ku, Tarrytown, NY (US);
Chung H. Lam, Williston, VT (US);
Nivo Rovedo, LaGrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a JOI structure which allows for reduction in both source/drain junction leakage and capacitance is provided. In the inventive method, an insulator layer is formed under the source/drain regions, but not under the channel region. The insulator layer is formed in the present invention after forming the gate stack region and recessing the semiconductor surface surrounding the gate stack region, followed by deposition of a conductive material such as polysilicon and, optionally, heavy source/drain diffusion formation.