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Lagrangeville, NY, United States of America

Nivo Rovedo

USPTO Granted Patents = 43

EPO Patents = 1

Average Co-Inventor Count = 3.8

ph-index = 14

Forward Citations = 865(Granted Patents)

Location History:

Poughquag, NY (US) (1985 - 1988)
Hopewell Junction, NY (US) (2011 - 2013)
Lagrangeville, NY (US) (1989 - 2014)

Company Filing History:

42 out of 164,219

International Business Machines Corporation

Chartered Semiconductor Manufacturing Ltd (corporation)

1 out of 14,738

Infineon Technologies Ag

4. 1 out of 131,744

Samsung Electronics Co., Ltd.

5. 1 out of 832,880

Other

patents

where one patent can have more than one assignee

Years Active: 1985-2014

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Areas of Expertise:

Silicide Formation

Asymmetric Devices

Multilayer Embedded Stressors

N-channel MOSFETs

Junction Isolation

Flash Memory Arrays

Bi-CMOS Devices

Field Effect Transistors

Vertical Bipolar Transistors

DRAM Cell Design

Thin SOI Layers

Self-Aligned Transistors

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8643119 - Substantially L-shaped silicide for contact (2014-02-04),

2. 8482075 - Structure and method for manufacturing asymmetric devices (2013-07-09),

3. 8232151 - Structure and method for manufacturing asymmetric devices (2012-07-31),

4. 8034692 - Structure and method for manufacturing asymmetric devices (2011-10-11),

5. 8017483 - Method of creating asymmetric field-effect-transistors (2011-09-13),

6. 7960798 - Structure and method to form multilayer embedded stressors (2011-06-14),

7. 7785950 - Dual stress memory technique method and related structure (2010-08-31),

8. 7618866 - Structure and method to form multilayer embedded stressors (2009-11-17),

9. 7473608 - N-channel MOSFETs comprising dual stressors, and methods for forming the same (2009-01-06),

10. 7442619 - Method of forming substantially L-shaped silicide contact for a semiconductor device (2008-10-28),

11. 7442618 - Method to engineer etch profiles in Si substrate for advanced semiconductor devices (2008-10-28),

12. 7279758 - N-channel MOSFETs comprising dual stressors, and methods for forming the same (2007-10-09),

13. 6916729 - Salicide formation method (2005-07-12),

14. 6797569 - Method for low topography semiconductor device formation (2004-09-28),

15. 6624486 - Method for low topography semiconductor device formation (2003-09-23),

Title: The Innovative Journey of Nivo Rovedo

Introduction: Nivo Rovedo, a talented inventor based in Lagrangeville, NY (US), has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Nivo Rovedo holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing new solutions to complex problems.

Career Highlights: Throughout his career, Nivo Rovedo has been recognized for his exceptional problem-solving skills and innovative thinking. His inventions have not only revolutionized industries but have also improved the lives of many.

Collaborations: Nivo Rovedo has collaborated with leading tech companies and research institutions to further develop and implement his inventions. His ability to work in diverse teams has led to the successful realization of many groundbreaking projects.

Conclusion: In conclusion, Nivo Rovedo stands as a beacon of innovation in the field of technology, continuously pushing the boundaries of what is possible through his inventive spirit and dedication to creating a better future for all.

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