The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jun. 23, 2011
Hasan M. Nayfeh, Hopewell Junction, NY (US);
Andres Bryant, Essex Junction, VT (US);
Arvind Kumar, Hopewell Junction, NY (US);
Nivo Rovedo, Hopewell Junction, NY (US);
Robert R. Robison, Essex Junction, VT (US);
Hasan M. Nayfeh, Hopewell Junction, NY (US);
Andres Bryant, Essex Junction, VT (US);
Arvind Kumar, Hopewell Junction, NY (US);
Nivo Rovedo, Hopewell Junction, NY (US);
Robert R. Robison, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.