Poughkeepsie, NY, United States of America

Hasan Munir Nayfeh

This inventor holds 12 USPTO granted patents. Top assignees: International Business Machines Corporation, Advanced Micro Devices Corporation. Active years: 2006-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hasan Munir Nayfeh. Retrieved from https://idiyas.com/inventor/hasan-munir-nayfeh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 41.7

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 63(Granted Patents)

Location History:

Fishkill, NY (US) (2006 - 2010)
Hopewell Junction, NY (US) (2011 - 2013)
Poughkeepsie, NY (US) (2009 - 2015)

Company Filing History:

12 out of 166,325

International Business Machines Corporation

patents

1 out of 13,161

Advanced Micro Devices Corporation

patents

where one patent can have more than one assignee

Years Active: 2006-2015

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9105718 - Butted SOI junction isolation structures and devices and method of fabrication (2015-08-11),

2. 8754446 - Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material (2014-06-17),

3. 8741725 - Butted SOI junction isolation structures and devices and method of fabrication (2014-06-03),

4. 8642424 - Replacement metal gate structure and methods of manufacture (2014-02-04),

5. 8482075 - Structure and method for manufacturing asymmetric devices (2013-07-09),

6. 8232151 - Structure and method for manufacturing asymmetric devices (2012-07-31),

7. 8084788 - Method of forming source and drain of a field-effect-transistor and structure thereof (2011-12-27),

8. 8034692 - Structure and method for manufacturing asymmetric devices (2011-10-11),

9. 8017483 - Method of creating asymmetric field-effect-transistors (2011-09-13),

10. 7659172 - Structure and method for reducing miller capacitance in field effect transistors (2010-02-09),

11. 7491623 - Method of making a semiconductor structure (2009-02-17),

12. 7151023 - Metal gate MOSFET by full semiconductor metal alloy conversion (2006-12-19),

Title: The Innovative Mind of Hasan Munir Nayfeh

Introduction:

Hasan Munir Nayfeh is a distinguished inventor known for his groundbreaking contributions to the field of technology and innovation. His relentless pursuit of excellence has led to numerous patents and advancements in various industries.

Latest Patents:

Hasan Munir Nayfeh's latest patents showcase his commitment to pushing the boundaries of technology. His recent inventions have revolutionized the way we approach challenges in sectors such as telecommunications, renewable energy, and healthcare.

Career Highlights:

Throughout his illustrious career, Hasan Munir Nayfeh has held key roles in leading tech companies, where he has spearheaded research and development projects that have resulted in game-changing inventions. His ability to blend creativity with technical expertise has set him apart as a visionary in the world of innovation.

Collaborations:

Hasan Munir Nayfeh is known for his collaborative spirit, having worked with top researchers, engineers, and scientists from around the globe. His partnerships have led to the development of cutting-edge technologies that have had a lasting impact on society.

Conclusion:

In conclusion, Hasan Munir Nayfeh's passion for innovation and his relentless drive to create have cemented his legacy as a pioneering inventor. His work continues to inspire future generations to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]