The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Jul. 16, 2005
Yung Fu Chong, Singapore, SG;
Brian Joseph Greene, Yorktown Heights, NY (US);
Siddhartha Panda, Beacon, NY (US);
Nivo Rovedo, Lagrangeville, NY (US);
Yung Fu Chong, Singapore, SG;
Brian Joseph Greene, Yorktown Heights, NY (US);
Siddhartha Panda, Beacon, NY (US);
Nivo Rovedo, Lagrangeville, NY (US);
Abstract
Structures and methods for forming keyhole shaped regions for isolation and/or stressing the substrate are shown. In a first embodiment, we form an inverted keyhole shaped trench in the substrate in the first opening preferably using a two step etch. Next, we fill the inverted keyhole trench with a material that insulates and/or creates stress on the sidewalls of the inverted keyhole trench. In a second embodiment, we form a keyhole stressor region adjacent to the gate and isolation structures. The keyhole stressor region creates stress near the channel region of the FET to improve FET performance. The stressor region can be filled with an insulator or a semiconductor material.