The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Nov. 14, 2003
Applicants:

Meikei Ieong, Wappingers Falls, NY (US);

Omer H. Dokumaci, Wappingers Falls, NY (US);

Thomas S. Kanarsky, Hopewell Junction, NY (US);

Victor Ku, Tarrytown, NY (US);

Inventors:

Meikei Ieong, Wappingers Falls, NY (US);

Omer H. Dokumaci, Wappingers Falls, NY (US);

Thomas S. Kanarsky, Hopewell Junction, NY (US);

Victor Ku, Tarrytown, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fabricating the same are provided. The adjoining extension and optional halo implant regions have an abrupt lateral profile and are located beneath said gate region.


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