The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Apr. 10, 2008
Igor Peidous, Loudonville, NY (US);
Victor Ku, Yorktown Heights, NY (US);
Joe Piccirillo, Hopewell Junction, NY (US);
Igor Peidous, Loudonville, NY (US);
Victor Ku, Yorktown Heights, NY (US);
Joe Piccirillo, Hopewell Junction, NY (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for fabricating dual material gate structures in a device is provided. The dual material gate structures have different gate electrode materials in different regions of the device. In one embodiment, the method includes providing a substrate having a patterned first gate electrode and a patterned first gate dielectric layer disposed on the substrate, removing a portion of the first gate electrode from the substrate to define a trench on the substrate, and filling the trench to form a second gate electrode.