The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Sep. 09, 2003
Cyril Cabral, Jr., Ossining, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
Victor Ku, Yorktown Heights, NY (US);
Ying LI, Poughkeepsie, NY (US);
Vijay Narayanan, New York, NY (US);
An L Steegen, Stamford, CT (US);
Yun-yu Wang, Poughquag, NY (US);
Kwong H. Wong, Wappingers Falls, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
Victor Ku, Yorktown Heights, NY (US);
Ying Li, Poughkeepsie, NY (US);
Vijay Narayanan, New York, NY (US);
An L Steegen, Stamford, CT (US);
Yun-Yu Wang, Poughquag, NY (US);
Kwong H. Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.