IDiyas

For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Valentin N Todorov

USPTO Granted Patents = 16

Average Co-Inventor Count = 5.0

ph-index = 11

Forward Citations = 536(Granted Patents)


Location History:

  • Fremont, CA (US) (1998 - 2010)
  • Palo Alto, CA (US) (2009 - 2010)

Company Filing History:

goldMedal16 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 1998-2010

Loading Chart...
16 patents (USPTO):
1. 7777152 - High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck (2010-08-17),
2. 7718538 - Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates (2010-05-18),
3. 7678710 - Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system (2010-03-16),
4. 7674394 - Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution (2010-03-09),
5. 7552736 - Process for wafer backside polymer removal with a ring of plasma under the wafer (2009-06-30),
6. 6962644 - Tandem etch chamber plasma processing system (2005-11-08),
7. 6706138 - Adjustable dual frequency voltage dividing plasma reactor (2004-03-16),
8. 6660127 - Apparatus for plasma etching at a constant etch rate (2003-12-09),
9. 6617794 - Method for controlling etch uniformity (2003-09-09),
10. 6507155 - Inductively coupled plasma source with controllable power deposition (2003-01-14),
11. 6447637 - Process chamber having a voltage distribution electrode (2002-09-10),
12. 6447636 - Plasma reactor with dynamic RF inductive and capacitive coupling control (2002-09-10),
13. 6399507 - Stable plasma process for etching of films (2002-06-04),
14. 6356097 - Capacitive probe for in situ measurement of wafer DC bias voltage (2002-03-12),
15. 5942889 - Capacitive probe for in situ measurement of wafer DC bias voltage (1999-08-24),

Title: Valentin N Todorov: A Pioneer in Plasma Technologies

Introduction:

Valentin N Todorov is a notable inventor based in Palo Alto, California, recognized for his significant contributions to the field of plasma technologies. With an impressive portfolio of 16 patents, he has developed innovative solutions that enhance the efficiency and performance of semiconductor processing.

Latest Patents:

Among his latest patents, one stands out: the High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck. This invention describes an RF blocking filter that effectively isolates a two-phase AC power supply from high voltage power, while allowing the conduction of substantial 60 Hz AC power to a resistive heating element, ensuring safe operation without overheating. His other significant patent is the Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates, which utilizes a pulsed plasma process to precisely remove portions of a semiconductor sample, showcasing advancements in etching techniques.

Career Highlights:

Valentin N Todorov works for Applied Materials, Inc., a leading company in the technology sector. His work primarily focuses on developing cutting-edge solutions that enhance semiconductor manufacturing processes and improve material performance.

Collaborations:

Throughout his career, Todorov has collaborated with esteemed colleagues, including John Patrick Holland and Alexander Miller Paterson. These partnerships have undoubtedly contributed to his innovative approach and success in the field of plasma technologies.

Conclusion:

Valentin N Todorov's contributions to the world of plasma technology and semiconductor processing are commendable. His inventive spirit and dedication to advancing technological capabilities continue to make him a significant figure in the industry, paving the way for future innovations.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…