The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Jun. 20, 1997
Applicant:
Inventors:
Peter K Loewenhardt, San Jose, CA (US);
Arthur Sato, San Jose, CA (US);
Valentin Todorov, Fremont, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ; H01L / ;
U.S. Cl.
CPC ...
324 725 ; 324765 ; 3241581 ; 438 14 ; 438 17 ;
Abstract
Apparatus and a concomitant method for estimating voltage on a wafer located in a process chamber. A probe, attached externally to a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.
Loewenhardt, Peter. (1999). Capacitive probe for in situ measurement of wafer dc bias voltage (U.S. Patent No. 5942889). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5942889
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile