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For the Inventor, By the Inventor

San Jose, CA, United States of America

Arthur H Sato

USPTO Granted Patents = 45

Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 1,044(Granted Patents)


Location History:

  • Santa Clara, CA (US) (1996 - 2003)
  • Fremont, CA (US) (2015 - 2016)
  • San Jose, CA (US) (1999 - 2020)

Company Filing History:

goldMedal25 out of 3,768 
 
Lam Research Corporation
 patents
silverMedal20 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 1996-2020

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45 patents (USPTO):
1. 10879044 - Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing (2020-12-29),
2. 10679825 - Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate (2020-06-09),
3. 10438775 - Methods for automatically determining capacitor values and systems thereof (2019-10-08),
4. 10431426 - Gas plenum arrangement for improving etch non-uniformity in transformer-coupled plasma systems (2019-10-01),
5. 10347464 - Cycle-averaged frequency tuning for low power voltage mode operation (2019-07-09),
6. 10332725 - Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network (2019-06-25),
7. 10319570 - Determining a malfunctioning device in a plasma system (2019-06-11),
8. 10297422 - Systems and methods for calibrating conversion models and performing position conversions of variable capacitors in match networks of plasma processing systems (2019-05-21),
9. 10134570 - Radiofrequency adjustment for instability management in semiconductor processing (2018-11-20),
10. 9997381 - Hybrid edge ring for plasma wafer processing (2018-06-12),
11. 9620337 - Determining a malfunctioning device in a plasma system (2017-04-11),
12. 9484214 - Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma (2016-11-01),
13. 9412670 - System, method and apparatus for RF power compensation in plasma etch chamber (2016-08-09),
14. 9322795 - Electrode for use in measuring dielectric properties of parts (2016-04-26),
15. 9083182 - Bypass capacitors for high voltage bias power in the mid frequency RF range (2015-07-14),

Title: The Innovative Path of Arthur H. Sato

Introduction

Arthur H. Sato, based in San Jose, CA, is a prolific inventor recognized for his significant contributions to the field of radio frequency (RF) technology. With a remarkable portfolio of 45 patents, Sato has established himself as a leading innovator, particularly in RF matching network systems and techniques.

Latest Patents

Sato's latest patents showcase advanced concepts in RF matching circuits. One of his notable inventions, titled "Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing," involves a control system that includes an RF matching circuit designed to optimize performance based on various pulsing levels from an RF generator. This innovation efficiently aligns the circuit's frequency tuning range with load impedances, enhancing signal integrity and operational efficiency.

Another notable patent, "Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate," introduces a method where the tuning of the RF generator and the impedance match occurs at different times. This strategic non-overlap minimizes reflected power during pulses, offering a significant advancement in the reliability of RF applications.

Career Highlights

Throughout his career, Arthur H. Sato has made impactful contributions while working with industry giants such as Lam Research Corporation and Applied Materials, Inc. His work has involved the development of cutting-edge technologies that have paved the way for advancements in semiconductor manufacturing and wireless communication technologies.

Collaborations

Sato has collaborated with esteemed professionals including Xue-Yu Qian and Jaehyun Kim, leveraging their collective expertise to push the boundaries of innovation within the RF domain. These collaborations have fostered an environment of creative problem-solving and technological development, contributing to the successful rollout of numerous patented technologies.

Conclusion

Arthur H. Sato's career is a testament to the spirit of innovation in the field of radio frequency technology. His extensive patent portfolio not only highlights his expertise and inventive spirit but also reflects his commitment to advancing the industry. Through his ongoing research and collaborations, Sato continues to play a pivotal role in shaping the future of RF applications.

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