The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Sep. 15, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventor:
Arthur H. Sato, San Jose, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32155 (2013.01); H01J 37/32183 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01);
Abstract
A system for performing a rapid alternating process (RAP) etch includes a bias frequency adjustment module that selectively adjusts a bias frequency of a bias radio frequency (RF) source. The bias RF source provides a bias power to a substrate processing system. A control module determines a tuned frequency of the bias RF source. The tuned frequency corresponds to an impedance matching value. The control module controls the bias frequency adjustment module to adjust the bias frequency to a detuned frequency. The detuned frequency increases the bias power of the bias RF source to a predetermined range.