Applied Materials, Inc.

Valentin N Todorov

John Patrick Holland

Alexander Miller Paterson

Arthur H Sato

Michael S Barnes

Peter K Loewenhardt

Thorsten B Lill

Padmapani Nallan

David Palagashvili

Xue-Yu Qian

Brian K Hatcher

Gerhard M Schneider

Robert E Ryan

Kartik Ramaswamy

Kenneth S Collins

Jennifer Y Sun

Andrew Nguyen

Yan Ye

Hiroji Hanawa

Alex Paterson

Shahid Rauf

Shaoher X Pan

Thai Cheng Chua

Farhad K Moghadam

Michael D Willwerth

Ajit Balakrishna

Patricia M Liu

James P Cruse

Martin Jeffrey Salinas

Jon McChesney

Imad Yousif

Dragan Valentin Podlesnik

Edward P Hammond

Dan Katz

Shashank C Deshmukh

Theodoros Panagopoulos

Tatsuya E Sato

Tae Won Kim

Steven C Hung

Mohit Kumar Jain

Kyeong-Tae Lee

Zhi-wen Sun

Patrick Leahey

Xueyu Qian

James E Sammons, Iii

Maocheng Li

Zhiwen Sun

Jin-Yuan Chen

Yoshi Tanase

An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck

A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates

The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to 'implant' metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.

Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system

A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.

Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution

A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

Process for wafer backside polymer removal with a ring of plasma under the wafer

A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

Tandem etch chamber plasma processing system

Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.

Adjustable dual frequency voltage dividing plasma reactor

We have discovered a method which permits plasma etching at a constant etch rate. The constant etch rate is achieved by controlling plasma process parameters so that a stable plasma is obtained, with a portion of the power deposited to the plasma being a capacitive contribution, and a portion being an inductive contribution. In particular, a stable plasma may be obtained within two process regions. In the first region, the gradient of the capacitive power to the power applied to the inductively coupled source for plasma generation &lsqb;&part;P /&part;P &rsqb; is greater than 0. In the second region, plasma stability is controlled so that &lsqb;&part;P /&part;P &rsqb; is less than 0 and so that P <<P . Typically, the magnitude of P is less than about 10% of the magnitude of P . Operation of the etch process in a stable plasma region enables use of a timed etch end point.

Apparatus for plasma etching at a constant etch rate

The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution network to selectively regulate a magnetic field intensity generated by the first and second coils above a workpiece in the processing chamber.

Method for controlling etch uniformity

Method and apparatus for distributing power from a single power source to a plurality of coils disposed on a processing chamber which provides controllable plasma uniformity across a substrate disposed in the processing chamber. The apparatus for distributing power from a power source to two or more coils disposed on a process chamber comprises a connection between the power source and a first coil, a series capacitor connected between the power source and the second coil, and a shunt capacitor connected to a node between the second coil and the power source. The method for distributing power from one power source to a plurality of coils comprises connecting a first coil between the power source and a ground connection, connecting a first power distribution network to the power source, wherein each power distribution network comprises a series capacitor and a shunt capacitor, and connecting a second coil between the first power distribution network and a ground connection.

Inductively coupled plasma source with controllable power deposition

The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.

Plasma reactor with dynamic RF inductive and capacitive coupling control

The present invention provides a process chamber and voltage distributive electrode (VDE) which distributes capacitive coupling between an inductive source and a plasma in a process chamber. The VDE is preferably slotted defining energy opaque and energy transparent portions which enable inductive coupling into the chamber while distributing capacitive coupling uniformly over the dielectric window.

Process chamber having a voltage distribution electrode

In accordance with the present invention, process parameters are controlled to provide a stable etch plasma. We have discovered that it is possible to operate a stable plasma with a portion of the power deposited to the plasma being a capacitive contribution and a portion of the power deposited being an inductive contribution. In particular, a stable plasma may be obtained within two process regions. In the first region, the gradient of the capacitive power to the power applied to the inductively coupled source for plasma generation &lsqb;&part;P /&part;P &rsqb; is greater than 0. In the second region, plasma stability is controlled so that &lsqb;&part;P /&part;P &rsqb; is less than 0 and so that P <<P . Typically, the magnitude of P is less than about 10% of the magnitude of P . In addition, in a plasma processing apparatus having a dual power control, at a given application of power to the plasma generation source, the stability of the plasma is extended by increasing the pressure in the etch process chamber. This enables operation of the etch process using lower power application for plasma generation. The stable plasma operating regime is overlaid upon other process parameters to obtain the desired etch results, to provide a reliable manufacturing process. Operation of the etch process in a stable plasma region enables use of a timed etch end point. For example, during etching of a silicon-containing layer, it is possible to use an etchant plasma which provides rapid etching and etch selectivity relative to adjacent layers during a first, timed etch portion of the etch process, and a different etchant plasma during a final emissions monitored etching to an underlying substrate interface. In addition, the stable plasma assists in the etching of doped and undoped silicon and polysilicon substrates at substantially the same rate, while providing for a clean etch process.

Stable plasma process for etching of films

A method and apparatus for estimating voltage on a wafer located in a process chamber. A probe, embedded in a wall of the process chamber, detects voltage levels generated by a plasma within the process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.

Capacitive probe for in situ measurement of wafer DC bias voltage

Apparatus and a concomitant method for estimating voltage on a wafer located in a process chamber. A probe, attached externally to a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.

Growing community of inventors

Palo Alto, CA, United States of America

Valentin N Todorov