Hillsboro, OR, United States of America

Umut Arslan

Average Co-Inventor Count = 6.1

ph-index = 2

Forward Citations = 14(Granted Patents)

Forward Citations (Not Self Cited) = 11(Sep 21, 2024)

Location History:

  • Hillsboro, OR (US) (2016 - 2019)
  • Portland, OR (US) (2022 - 2024)


Years Active: 2016-2025

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):

Title: Inventor Profile: Umut Arslan

Introduction

Umut Arslan is a prominent inventor based in Hillsboro, Oregon, with a significant contribution to the field of semiconductor devices. With a total of 10 patents to his name, Arslan is recognized for his innovative approaches to memory cell architectures and dielectric techniques, which enhance the efficiency and density of memory arrays.

Latest Patents

Among his latest patents, Arslan has developed a two-transistor memory cell that utilizes stacked thin-film transistors (TFTs). This design allows for an increased density of memory cells within a defined footprint, thereby optimizing space and functionality in semiconductor applications.

Additionally, he has patented methods regarding capacitor separations in dielectric layers. This invention details a semiconductor device structure that improves the arrangement and separation of capacitors, enhancing the device's performance metrics.

Career Highlights

Umut Arslan is currently employed at Intel Corporation, a leading technology company known for its innovative contributions to the semiconductor industry. His work at Intel reflects his commitment to advancing semiconductor technology and improving memory solutions.

Collaborations

Arslan collaborates with esteemed colleagues such as Fatih Hamzaoglu and Abhishek A Sharma. Together, they push the boundaries of technology through their collaborative efforts, sharing knowledge and expertise to foster innovative developments in their field.

Conclusion

Umut Arslan's contributions to semiconductor technology and his notable patents make him a key figure in the landscape of modern innovations within the tech industry. His work not only enhances the capabilities of memory devices but also sets the stage for future advancements in semiconductor technology.

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