The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Jun. 28, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Travis W. Lajoie, Forest Grove, OR (US);

Abhishek A. Sharma, Hillsboro, OR (US);

Van H. Le, Portland, OR (US);

Chieh-Jen Ku, Hillsboro, OR (US);

Pei-Hua Wang, Beaverton, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Bernhard Sell, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Gregory George, Beaverton, OR (US);

Akash Garg, Portland, OR (US);

Julie Rollins, Forest Grove, OR (US);

Allen B. Gardiner, Portland, OR (US);

Shem Ogadhoh, Beaverton, OR (US);

Juan G. Alzate Vinasco, Tigard, OR (US);

Umut Arslan, Portland, OR (US);

Fatih Hamzaoglu, Portland, OR (US);

Nikhil Mehta, Portland, OR (US);

Ting Chen, Portland, OR (US);

Vinaykumar V. Hadagali, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1085 (2013.01); H01L 27/10805 (2013.01); H01L 27/10873 (2013.01);
Abstract

Embodiments herein describe techniques for a semiconductor device having an interconnect structure including an inter-level dielectric (ILD) layer between a first layer and a second layer of the interconnect structure. The interconnect structure further includes a separation layer within the ILD layer. The ILD layer includes a first area with a first height to extend from a first surface of the ILD layer to a second surface of the ILD layer. The ILD layer further includes a second area with a second height to extend from the first surface of the ILD layer to a surface of the separation layer, where the first height is larger than the second height. Other embodiments may be described and/or claimed.


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