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For the Inventor, By the Inventor

Taipei, Taiwan

Tsung-Hsun Huang

USPTO Granted Patents = 10

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 53(Granted Patents)


Location History:

  • Taipei County, TW (2004 - 2009)
  • Taipei, TW (2003 - 2010)
  • Chungho, TW (2004 - 2010)

Company Filing History:

goldMedal10 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2003-2010

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10 patents (USPTO):Explore Patents
1. 7805258 - System and method for film stress and curvature gradient mapping for screening problematic wafers (2010-09-28),
2. 7799654 - Reduced refractive index and extinction coefficient layer for enhanced photosensitivity (2010-09-21),
3. 7786552 - Semiconductor device having hydrogen-containing layer (2010-08-31),
4. 7622347 - Self-aligned metal electrode to eliminate native oxide effect for metal insulator semiconductor (MIS) capacitor (2009-11-24),
5. 7199001 - Method of forming MIM capacitor electrodes (2007-04-03),
6. 7180116 - Self-aligned metal electrode to eliminate native oxide effect for metal insulator semiconductor (MIS) capacitor (2007-02-20),
7. 6869837 - Methods of fabricating a word-line spacer for wide over-etching window on outside diameter (OD) and strong fence (2005-03-22),
8. 6833578 - Method and structure improving isolation between memory cell passing gate and capacitor (2004-12-21),
9. 6780731 - HDP gap-filling process for structures with extra step at side-wall (2004-08-24),
10. 6653203 - Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenches (2003-11-25),

Title: Tsung-Hsun Huang: Innovator in Semiconductor Technology

Introduction

Tsung-Hsun Huang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Huang's latest patents include innovative methods for testing and evaluating semiconductor wafers. One notable patent is a system and method for film stress and curvature gradient mapping for screening problematic wafers. This method involves collecting stress data from a wafer after a current top layer is formed, allowing for the evaluation of stress in both the x and y directions. Another significant patent is for a reduced refractive index and extinction coefficient layer for enhanced photosensitivity in image sensor devices. This invention includes a semiconductor substrate with a plurality of pixels and an etch-stop layer designed to improve the performance of image sensors.

Career Highlights

Tsung-Hsun Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing the technology used in modern electronic devices. Huang's expertise in wafer testing and image sensor technology has positioned him as a key figure in the field.

Collaborations

Huang has collaborated with notable colleagues, including Yeur-Luen Tu and Chung-Yi Yu. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Tsung-Hsun Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the advancement of electronic devices and their performance.

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