The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Dec. 11, 2003
Kuo-Chi Tu, Hsin-Chu, TW;
Chun-Yao Chen, Hsin-Chu, TW;
Huey-Chi Chu, Hsinchu, TW;
Chung-Wei Chang, Hsin-Chu, TW;
Tien-Lu Lin, Hsinchu, TW;
Kuo-Ching Huang, Kaohsiung, TW;
Wen-Cheng Chen, Hsin-Chu, TW;
Tsung-Hsun Huang, Taipei County, TW;
Hsiao-Hui Tseng, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A memory cell comprising a capacitor having a dielectric layer interposing first and second vertically disposed electrodes, an insulating lining located over the capacitor, and a transistor gate extension passing over the capacitor. A spacer isolates an end of one of the capacitor electrodes from the transistor gate extension. In one embodiment, the spacer includes a first non-planar profile configured to engage a second non-planar profile comprising ends of the one of the capacitor electrodes and the insulating lining.