The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Dec. 01, 2005
Yuan-chih Hsieh, Hsin-Chu, TW;
Chung-yi Yu, Hsin-Chu, TW;
Tsung-hsun Huang, Chungho, TW;
Tzu-hsuan Hsu, Kaohsiung, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Yuan-Chih Hsieh, Hsin-Chu, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Tsung-Hsun Huang, Chungho, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An image sensor device includes a semiconductor substrate and a plurality of pixels on the substrate. An etch-stop layer is formed over the pixels and has a thickness less than about 600 Angstroms. The image sensor device further includes an interlayer dielectric (ILD) overlying the etch stop layer. The etch-stop layer has a refractive index less than about 2 and an extinction coefficient less than about 0.1.