The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Jun. 10, 2005
Tsung-hsun Huang, Chungho, TW;
Kuo-yin Lin, Jhubei, TW;
Chung-yi Yu, Hsin-chu, TW;
Chih-ta Wu, Hsinchu, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Tsung-Hsun Huang, Chungho, TW;
Kuo-Yin Lin, Jhubei, TW;
Chung-Yi Yu, Hsin-chu, TW;
Chih-Ta Wu, Hsinchu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for reducing leakage current in a semiconductor structure is disclosed. One or more dielectric layers are formed on a semiconductor substrate, on which at least one device is constructed. A hydrogen-containing layer is formed over the dielectric layers. A silicon nitride passivation layer covers the dielectric layers and the hydrogen-containing layer. The hydrogen atoms of the hydrogen-containing layer are introduced into the dielectric layers without being blocked by the silicon nitride layer, thereby reducing leakage current therein.