The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Feb. 16, 2007
Hsueh-hung Fu, Hsin-Chu, TW;
Chih-wei Chang, Hsin-Chu, TW;
Shih-chang Chen, Hsin-Chu, TW;
Chin-piao Chang, Taipei, TW;
Shing-chyang Pan, Hsinchu, TW;
Wei-jung Lin, Taipei, TW;
Tsung-hsun Huang, Taipei, TW;
Hsueh-Hung Fu, Hsin-Chu, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Shih-Chang Chen, Hsin-Chu, TW;
Chin-Piao Chang, Taipei, TW;
Shing-Chyang Pan, Hsinchu, TW;
Wei-Jung Lin, Taipei, TW;
Tsung-Hsun Huang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of testing a wafer after a current top layer is formed over the wafer. Stress data is collected for the wafer after forming the current top layer. The stress data is derived from changes in wafer curvature. The stress data includes: stress-xx in an x direction and stress-yy in a y direction for each area of a set of finite areas on the wafer, the stress-xx and stress-yy both being derived from wafer-curvature-change-xx in the x direction for each area of the set of finite areas and from wafer-curvature-change-yy in the y direction for each area of the set of finite areas; and the stress-xy being derived from wafer-curvature-change-xy, wherein wafer-curvature-change-xy is a change in wafer twist in the x-y plane for each area of the set of finite areas. A stress gradient vector (and/or its norm) is calculated and used to evaluate the investigating single or multiple accumulated layer.