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For the Inventor, By the Inventor

Tainan, Taiwan

Tsung-Hsien Lee

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 19(Granted Patents)


Location History:

  • Tainan, TW (2015 - 2022)
  • Hsinchu, TW (2023)

Company Filing History:

goldMedal20 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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20 patents (USPTO):Explore Patents
1. 12444688 - Deep trench protection (2025-10-14),
2. 12419064 - Trench capacitor (2025-09-16),
3. 11810945 - Trench capacitor and method of forming the same (2023-11-07),
4. 11373952 - Deep trench protection (2022-06-28),
5. 11131541 - Shutter monitoring system (2021-09-28),
6. 10868107 - Trench capacitor and method of forming the same (2020-12-15),
7. 10804206 - Deep trench protection (2020-10-13),
8. 10508020 - Substrate structure, semiconductor structure and method for fabricating the same (2019-12-17),
9. 10424549 - Trench structure and method (2019-09-24),
10. 10115679 - Trench structure and method (2018-10-30),
11. 9972771 - MRAM devices and methods of forming the same (2018-05-15),
12. 9703919 - System and method of filtering actual defects from defect information for a wafer (2017-07-11),
13. 9673200 - Semiconductor device structure and method of manufacturing the same (2017-06-06),
14. 9659874 - Method of forming deep trench and deep trench isolation structure (2017-05-23),
15. 9647022 - Multi-layer structure for high aspect ratio etch (2017-05-09),

Title: Innovations by Tsung-Hsien Lee: Contributions to Semiconductor Technology

Introduction

Tsung-Hsien Lee, an accomplished inventor based in Tainan, Taiwan, has made significant strides in the semiconductor industry. With a remarkable portfolio of 18 patents, his innovations have contributed to advancing semiconductor device technologies, particularly in the areas of trench capacitors and deep trench protection methods.

Latest Patents

Among Tsung-Hsien Lee's latest patents is a groundbreaking method for forming a trench capacitor. This invention involves etching a substrate to create two trenches and subsequently depositing capacitor layer pairs in each trench. The method outlines the deposition of distinct materials in each trench, with a focus on planarizing these layers to expose the underlying substrate. Additionally, his work on deep trench protection highlights a semiconductor device featuring a conductive layer over a substrate, integrated with a trench structure, and protected by a specialized overlay. This dual approach ensures enhanced performance and durability in semiconductor devices.

Career Highlights

Tsung-Hsien Lee is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor manufacturing industry. His contributions to semiconductor technology underscore his role as a pivotal inventor in this field, demonstrating a commitment to innovation and excellence.

Collaborations

Throughout his career, Tsung-Hsien Lee has collaborated with notable colleagues such as Shih-Chi Kuo and Tsai-Hao Hung. These partnerships have fostered the development of cutting-edge technologies that enhance the capabilities and efficiency of semiconductor devices.

Conclusion

In summary, Tsung-Hsien Lee's inventive work has significantly impacted the semiconductor industry. With his 18 patents and ongoing contributions to advanced technologies at Taiwan Semiconductor Manufacturing Company Limited, he continues to shape the future of semiconductor innovation. His dedication to improving device performance and reliability marks him as a leading figure in the field.

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