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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10115679 B1

PDFFull Text
Date of Patent:
Oct. 30, 2018

Filed:

Jun. 19, 2017

Trench structure and method

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Fu-Chiang Kuo, Hsinchu, TW;

Shih-Chi Kuo, Yangmei, TW;

Tsung-Hsien Lee, Tainan, TW;

Ying-Hsun Chen, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

George Fourson, Iii

Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/544 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/532 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/0217 (2013.01); H01L 21/02167 (2013.01); H01L 21/56 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/544 (2013.01); H01L 23/585 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 51/5243 (2013.01); H01L 51/5246 (2013.01); H01L 2223/5446 (2013.01);
Abstract

A trench structure includes a top metal layer, a silicon carbide (SiC) layer on the top metal layer, a first passivation layer overlying the SiC layer, and a second passivation layer overlying the first passivation layer. The trench structure also includes a first sidewall and a second sidewall that, together with the top metal layer, form a trench. At least one of the first sidewall or the second sidewall includes a sidewall of the second passivation layer and a sidewall of the SiC layer.

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Kuo, Fu-Chiang. (2018). Trench structure and method (U.S. Patent No. 10115679). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10115679

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