Taoyuan, Taiwan

Ying-Hsun Chen

This inventor holds 20 USPTO granted patents and 7 published patent applications, primarily in Photonic Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying-Hsun Chen. Retrieved from https://idiyas.com/inventor/ying-hsun-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Taoyuan, TW (2017 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Stacked Device Structures
Image Sensor
Deep Trench Capacitor
Photonic Device
Integrated Circuit
Quantum Effect Length
Micro-Electromechanical System
Trench Isolation
Circular Grating Structure
Light Conversion Efficiency
Contact Field Plate
20 patents (USPTO):Explore Patents

Title: **Innovations by Ying-Hsun Chen: Pioneering Photonic Devices**

Introduction

Ying-Hsun Chen, an accomplished inventor based in Taoyuan, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 16 patents, his innovations primarily focus on integrated circuits and photonic devices. His work continues to influence the industry and promote advancements in electronic components.

Latest Patents

Among his latest patents is an **Integrated Circuit Photodetector**. This innovative design features an integrated circuit that includes a photodetector, which encompasses one or more dielectric structures situated within a trench of a semiconductor substrate. The design also incorporates a photosensitive material that covers the dielectric structures and is topped with a dielectric layer, with the photosensitive material having a higher index of refraction than both the dielectric structures and the dielectric layer.

In addition to the photodetector, Chen has developed a patent titled **Photonic Device and Method Having Increased Quantum Effect Length**. This method involves creating a cavity within a substrate, extending from one surface to another. Sidewall spacers line the cavity's walls, and a semiconductor layer is formed on the second surface, directly abutting the sidewall spacers within the cavity. These advancements promise to enhance the performance and efficiency of photonic devices.

Career Highlights

Ying-Hsun Chen currently works at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to innovate within the semiconductor industry. His expertise in integrated circuit technology and photonics has positioned him as a leader in the field, significantly contributing to the technological advancements that the company champions.

Collaborations

Collaboration plays a crucial role in Chen’s work. He has partnered with esteemed colleagues, including Tsai-Hao Hung and Tao-Cheng Liu, to further push the boundaries of semiconductor innovations. Their teamwork enhances their research outcomes and fosters an environment of shared knowledge and expertise.

Conclusion

Ying-Hsun Chen's contributions to the semiconductor industry through his patents and collaborations showcase his dedication to innovation. His work in photonic devices and integrated circuits paves the way for future advancements and establishes him as a key figure in the ongoing development of semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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