The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Apr. 07, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tao-Cheng Liu, Hsinchu, TW;
Ying-Hsun Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/765 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 64/111 (2025.01); H01L 21/765 (2013.01); H10D 30/0281 (2025.01); H10D 30/65 (2025.01);
Abstract
A semiconductor device and method of forming the semiconductor device are disclosed. The method includes forming first and second conductive structures on a semiconductor substrate, forming one or more dielectric layers between the first and second conductive structures, covering the one or more dielectric layers with a first masking layer, forming a first opening in the first masking layer, depositing a conductive material in the first opening to form a field plate structure, and electrically connecting the field plate structure to another conductor.