The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jun. 20, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tao-Cheng Liu, Hsinchu, TW;
Shih-Chi Kuo, Yangmei, TW;
Tsai-Hao Hung, Hsinchu, TW;
Tsung-Hsien Lee, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Methods of manufacturing trench capacitors include forming a trench opening in a substrate, depositing a first dielectric layer over a sidewall and a bottom surface of a first trench opening in a substrate, and depositing a first conductive layer over the first dielectric layer. The first dielectric layer and the first conductive layer are then planarized to expose a planarized top surface of the substrate and a planarized top surface of the first conductive layer in the first trench opening. An ILD layer is deposited over the planarized top surface of the substrate and over the planarized surface of the first conductive layer. A first electrical contact is formed through the ILD layer to provide an electrical connection to the first conductive layer within the first trench opening.