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For the Inventor, By the Inventor

Yokohama, Japan

Toshinobu Ohnishi

This inventor holds 15 USPTO granted patents, primarily in Field Effect Transistors. Top assignee: Canon Kabushiki Kaisha. Active years: 1999-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshinobu Ohnishi. Retrieved from https://idiyas.com/inventor/toshinobu-ohnishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15

% Patents Active = 26.7

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 55(Granted Patents)


Location History:

  • Shizuoka-ken, JP (1999)
  • Urawa, JP (1999 - 2000)
  • Yokohama, JP (2007 - 2011)

Company Filing History:

goldMedal15 out of 93,258 
 
Canon Kabushiki Kaisha
 patents

Years Active: 1999-2011

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Areas of Expertise:
Field Effect Transistor
Organic Semiconductor
Manufacturing Method
Polysiloxane Compound
Laminated Member
Substrate
Gas Stream Classifier
Pneumatic Impact Pulverizer
Surface Treatment
Semiconductor Device
15 patents (USPTO):Explore Patents
1. 8021915 - Field effect transistor, method of producing the same, and method of producing laminated member (2011-09-20),
2. 7960716 - Field effect transistor and method of producing the same (2011-06-14),
3. 7795636 - Organic semiconductor device, field-effect transistor, and their manufacturing methods (2010-09-14),
4. 7695999 - Production method of semiconductor device (2010-04-13),
5. 7605392 - Field effect transistor and production process thereof (2009-10-20),
6. 7511296 - Organic semiconductor device, field-effect transistor, and their manufacturing methods (2009-03-31),
7. 7491967 - Field effect transistor, method of producing the same, and method of producing laminated member (2009-02-17),
8. 7459338 - Substrate, conductive substrate, fine structure substrate, organic field effect transistor and manufacturing method thereof (2008-12-02),
9. 7435989 - Semiconductor device with layer containing polysiloxane compound (2008-10-14),
10. 7394096 - Field effect transistor and method of manufacturing the same (2008-07-01),
11. 7285441 - Field effect transistor and method of manufacturing the same (2007-10-23),
12. 6015648 - Gas stream classifier and process for producing toner (2000-01-18),
13. 5934575 - Pneumatic impact pulverizer and process for producing toner (1999-08-10),
14. 5934478 - Gas stream classifier and process for producing toner (1999-08-10),
15. 5865381 - Surface treating apparatus for solid particles, surface treating method (1999-02-02),

Title: Toshinobu Ohnishi: Innovator in Field Effect Transistors

Introduction

Toshinobu Ohnishi is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of organic semiconductors, particularly in the development of field effect transistors. With a total of 15 patents to his name, Ohnishi's work has advanced the capabilities of electronic devices.

Latest Patents

Ohnishi's latest patents focus on innovative methods for producing field effect transistors. One of his notable inventions involves a field effect transistor that incorporates an organic semiconductor layer containing porphyrin. This design allows for the creation of a transistor that exhibits high crystallinity and orientation, resulting in improved mobility. Another patent aims to provide a field effect transistor with high field-effect mobility and an excellent ON/OFF ratio, achieved through the use of porphyrin compounds with superior crystallinity.

Career Highlights

Ohnishi is currently employed at Canon Kabushiki Kaisha, where he continues to push the boundaries of semiconductor technology. His work has not only contributed to the advancement of field effect transistors but has also positioned him as a key figure in the field of organic electronics.

Collaborations

Throughout his career, Ohnishi has collaborated with talented individuals such as Tomonari Nakayama and Daisuke Miura. These partnerships have fostered innovation and have been instrumental in the development of his groundbreaking patents.

Conclusion

Toshinobu Ohnishi's contributions to the field of field effect transistors highlight his role as a leading inventor in organic semiconductor technology. His innovative patents and collaborations continue to shape the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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