The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jan. 15, 2009
Daisuke Miura, Numazu, JP;
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Kawasaki, JP;
Akane Masumoto, Yokohama, JP;
Hidetoshi Tsuzuki, Kawasaki, JP;
Makiko Miyachi, Kawasaki, JP;
Daisuke Miura, Numazu, JP;
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Kawasaki, JP;
Akane Masumoto, Yokohama, JP;
Hidetoshi Tsuzuki, Kawasaki, JP;
Makiko Miyachi, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.