The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Jun. 09, 2005
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
There is provided a field effect transistor including a substrate, an organic semiconductor layer, an insulating layer, and a conductive layers, and, wherein the insulating layercomprises a cured product of a phenol resin represented by the following general formula (1): (R, Rand Reach represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, Xand Xeach represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.