The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Sep. 05, 2006
Tomonari Nakayama, Yokohama, JP;
Akane Masumoto, Yokohama, JP;
Shintetsu Go, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Tomonari Nakayama, Yokohama, JP;
Akane Masumoto, Yokohama, JP;
Shintetsu Go, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.