Canon Kabushiki Kaisha

Toshinobu Ohnishi

Tomonari Nakayama

Daisuke Miura

Makoto Kubota

Akane Masumoto

Yoshinori Tsuji

Satoshi Mitsumura

Hidetoshi Tsuzuki

Shintetsu Go

Makiko Miyachi

Satomi Sugiyama

There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Field effect transistor, method of producing the same, and method of producing laminated member

An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity Iin a Bragg angle (2&#x3b8;) range of 9.9&#xb0; to 10.4&#xb0; stronger than a maximum diffraction intensity Iin a Bragg angle (2&#x3b8;) range of 23.0&#xb0; to 26.0&#xb0; in X-ray diffraction using CuK&#x3b1; radiation.

Field effect transistor and method of producing the same

An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

Organic semiconductor device, field-effect transistor, and their manufacturing methods

Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.

Production method of semiconductor device

There is provided a field effect transistor including a substrate, an organic semiconductor layer, an insulating layer, and a conductive layers, and, wherein the insulating layercomprises a cured product of a phenol resin represented by the following general formula (1): (R, Rand Reach represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, Xand Xeach represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.

Field effect transistor and production process thereof

A substrate is provided which comprises an organic resin layer on a base material, wherein the base material has an average surface roughness of not less than 1.2 nm but no more than 5 nm and a maximum height of a surface unevenness of not less than 0.1 &#x3bc;m but no more than 1.0 &#x3bc;m; the organic resin layer has an average surface roughness of not more than 1 nm and a maximum peak height of a surface unevenness of not more than 30 nm; and at least a part of a surface of the organic resin layer comprises a hydrophilic region.

Substrate, conductive substrate, fine structure substrate, organic field effect transistor and manufacturing method thereof

Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.

Semiconductor device with layer containing polysiloxane compound

Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2&#x3b8;) in CuK&#x3b1; X-ray diffraction of 8.4&#xb0;&#xb1;0.2&#xb0;, 10.2&#xb0;&#xb1;0.2&#xb0;, 11.8&#xb0;&#xb1;0.2&#xb0;, and 16.9&#xb0;&#xb1;0.2&#xb0;, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). (Wherein R's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R's each represent a hydrogen atom or an aryl group.).

Field effect transistor and method of manufacturing the same

Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2&#x3b8;) in CuK&#x3b1; X-ray diffraction of 8.4&#xb0;&#xb1;0.2&#xb0;, 10.2&#xb0;&#xb1;0.2&#xb0;, 11.8&#xb0;&#xb1;0.2&#xb0;, and 16.9&#xb0;&#xb1;0.2&#xb0;, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R's each represent a hydrogen atom or an aryl group.)

A gas stream classifier has a gas stream classifying means for classifying a feed powder supplied from a feed supply nozzle, into at least a coarse powder fraction, a median powder fraction and a fine powder fraction by an inertia force acting on particles and a centrifugal force acting on a curved gas stream due to Coanda effect in a classification zone, wherein the classification zone is defined by at least a Coanda block and a plurality of classifying edges, the feed supply nozzle is attached at the top of the gas stream classifier, the Coanda block is attached on one side of the feed supply nozzle, and the feed supply nozzle has at its rear end a feed powder intake portion for supplying the feed powder, and a high-pressure air intake portion.

Gas stream classifier and process for producing toner

A gas stream classifier has a gas stream classifier for classifying a feed powder supplied from a feed supply nozzle, into at least a coarse powder fraction, a median powder fraction and a fine powder fraction by an inertia force acting on particles and a centrifugal force acting on a curved gas stream due to Coanda effect in a classification zone, wherein the classification zone is defined by at least a Coanda block and a plurality of classifying edges, the feed supply nozzle is attached at the top of the gas stream classifier, the Coanda block is attached on one side of the feed supply nozzle, and the feed supply nozzle has at its rear end a feed powder intake portion for supplying the feed powder, and a high-pressure air intake portion.

A pneumatic impact pulverizer is disclosed which has a nozzle for feeding high-pressure gas, a tube for transporting and accelerating a pulverizing material, a pulverization chamber, and an impact member for pulverizing the material. The impact member is opposed to an outlet of the accelerating tube and has at least a first impact face projecting toward the accelerating tube side and a second impact face sloped toward the downstream side. The pulverization chamber has at least a first sidewall positioned on the side more upstream than the outermost edge of the second impact face and a second sidewall positioned on the downstream side of the first sidewall. The pulverization chamber is enlarged at its part on the side more upstream than the outermost edge of the second impact face so that the cross-sectional area of the inside of the chamber at that part is larger than that of the inside of the chamber corresponding to the outermost edge of the second impact face. The tip of the first impact face is positioned on the side more upstream than the downstream side edge of the first sidewall. The pulverization can be conducted in a very high efficiency with the pulverizer. Also, a process for producing a toner for developing electrostatic images using the pulverizer is disclosed.

Pneumatic impact pulverizer and process for producing toner

An apparatus for treating the surfaces of solid particles has at least a first cylindrical treating chamber and a rotary shaft and a first rotor having two or more blades on its front face, contained in the first cylindrical treating chamber. A powder charging aperture for introducing the solid particles into the first cylindrical treating chamber together with gas is provided at the center of the front wall of the first cylindrical treating chamber, opposed to the front face of the first rotor. A first powder discharging aperture for discharging the treated solid particles is provided at the center of the rear wall of the first cylindrical treating chamber, opposed to the rear face of the first rotor. The first rotor is connected with the rotary shaft and rotated by the rotation of the rotary shaft. The height H.sub.a of the blades, the gap L.sub.1a between the tip of each of the blades and the front wall, the largest diameter R.sub.1a of the first rotor and the gap L.sub.2a between the blades and the sidewall of the first cylindrical treating chamber satisfy the following conditions:

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Yokohama, Japan

Toshinobu Ohnishi