The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2010

Filed:

Aug. 31, 2006
Applicants:

Akane Masumoto, Yokohama, JP;

Shintetsu Go, Yokohama, JP;

Tomonari Nakayama, Yokohama, JP;

Toshinobu Ohnishi, Yokohama, JP;

Inventors:

Akane Masumoto, Yokohama, JP;

Shintetsu Go, Yokohama, JP;

Tomonari Nakayama, Yokohama, JP;

Toshinobu Ohnishi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.


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