The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Aug. 17, 2004
Daisuke Miura, Numazu, JP;
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Kawasaki, JP;
Daisuke Miura, Numazu, JP;
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R's each represent a hydrogen atom or an aryl group.)