The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Mar. 08, 2005
Daisuke Miura, Tokyo, JP;
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Tokyo, JP;
Akane Masumoto, Yokohama, JP;
Satomi Sugiyama, Tokyo, JP;
Daisuke Miura, Tokyo, JP;
Tomonari Nakayama, Yokohama, JP;
Toshinobu Ohnishi, Yokohama, JP;
Makoto Kubota, Tokyo, JP;
Akane Masumoto, Yokohama, JP;
Satomi Sugiyama, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity Iin a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity Iin a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.