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For the Inventor, By the Inventor

Amagasaki, Japan

Toshihisa Nozawa

This inventor holds 82 USPTO granted patents and 26 published patent applications, primarily in Plasma Processing (CPC class H01J37-3244). Top assignees: Tokyo Electron Limited, Asm IP Holding B.v., Kabushiki Kaisha Toshiba. Active years: 1992-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihisa Nozawa. Retrieved from https://idiyas.com/inventor/toshihisa-nozawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 82 

% Patents Active = 50.0

Average Co-Inventor Count = 2.7

ph-index = 12

Forward Citations = 908(Granted Patents)

Forward Citations (Not Self Cited) = 861(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yokohama, JP (1992 - 1993)
  • Kobe, JP (1993 - 2011)
  • Hyogo, JP (2010 - 2015)
  • Sendai, JP (2013 - 2017)
  • Kurokawa-gun, JP (2017)
  • Sendai Miyagi, JP (2017 - 2018)
  • Taiwa-cho, JP (2018)
  • Amagasaki, JP (2008 - 2019)
  • Kanagawa, JP (2019)
  • Miyagi, JP (2015 - 2020)
  • Tokyo, JP (2001 - 2022)
  • Kawasaki, JP (2018 - 2024)

Company Filing History:

goldMedal65 out of 10,904 
 
Tokyo Electron Limited
 patents
silverMedal14 out of 1,318 
 
Asm IP Holding B.v.
 patents
bronzeMedal9 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
4. 4 out of 1,051 
 
Tohoku University
 patents
5. 1 out of 1,101 
 
Kabushiki Kaisha Kobe Seiko Sho
 patents
6. 1 out of 103 
 
Tokyo Electron Limi Ted
 patents
7. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1992-2026

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Areas of Expertise:
Plasma Processing
Semiconductor Fabrication
Electronic Structure
Film Forming
Etching Method
Substrate Processing
Microwave Plasma
Neutral Beam
Coaxial Waveguide
Wafer Processing
Pattern Forming
Gas Release
82 patents (USPTO):Explore Patents
1. 12745611 - Substrate processing method and apparatus (2026-09-22),
2. 12272548 - Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method (2025-04-08),
3. 12129548 - Method of forming structures using a neutral beam (2024-10-29),
4. 11929251 - Substrate processing apparatus having electrostatic chuck and substrate processing method (2024-03-12),
5. 11908684 - Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method (2024-02-20),
6. 11643724 - Method of forming structures using a neutral beam (2023-05-09),
7. 11605528 - Plasma device using coaxial waveguide, and substrate treatment method (2023-03-14),
8. 11482418 - Substrate processing method and apparatus (2022-10-25),
9. 11476109 - Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method (2022-10-18),
10. 10844489 - Film forming apparatus and shower head (2020-11-24),
11. 10658181 - Method of spacer-defined direct patterning in semiconductor fabrication (2020-05-19),
12. 10424462 - Multi-cell resonator microwave surface-wave plasma apparatus (2019-09-24),
13. 10388557 - Placing bed structure, treating apparatus using the structure, and method for using the apparatus (2019-08-20),
14. 10290523 - Wafer processing apparatus, recording medium and wafer conveying method (2019-05-14),
15. 10262865 - Methods for manufacturing semiconductor devices (2019-04-16),

Title: Innovations and Contributions of Toshihisa Nozawa in Advanced Technology

Introduction

Toshihisa Nozawa, based in Amagasaki, Japan, is a renowned inventor with a remarkable portfolio of 80 patents. His contributions primarily revolve around advancements in structure formation methods using neutral beams, which have significant applications in various technological fields.

Latest Patents

One of Toshihisa Nozawa's latest patents is focused on a method of forming structures using a neutral beam. This invention details processes for forming structures and reactor systems that utilize activated species during layer deposition and for treating deposited layers. Another notable patent involves a substrate processing apparatus that features an electrostatic chuck and a unique substrate processing method. This innovative apparatus comprises a chamber and an upper cover, integrated with an electrostatic chuck that includes a dielectric body and an embedded electrode. The design considerations ensure the effective generation of plasma, enhancing the substrate processing performance.

Career Highlights

Throughout his career, Toshihisa Nozawa has been associated with leading firms in the technological landscape, including Tokyo Electron Limited and ASM IP Holding B.V. His work has not only contributed to advancing patent technologies but has also played a vital role in the commercial success of the companies he served.

Collaborations

Toshihisa Nozawa has collaborated with many talented professionals in his field. Notable among his coworkers are Kiyotaka Ishibashi and Caizhong Tian, with whom he has likely worked on various research and patent initiatives, contributing to innovative solutions in substrate processing and neutral beam applications.

Conclusion

Toshihisa Nozawa's extensive number of patents and his innovative contributions significantly impact the technological sector. His continued efforts in developing methods for enhanced structure formation highlight the critical role of inventors in driving innovation and progress in various industries.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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