The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Apr. 14, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Atsuki Fukazawa, Tama, JP;
Toshihisa Nozawa, Kawasaki, JP;
Assignee:
ASM IP HOLDING B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/44 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/347 (2013.01); C23C 16/4408 (2013.01); C23C 16/45536 (2013.01); C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/28568 (2013.01); H01J 2237/3321 (2013.01);
Abstract
An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.