Tokyo Electron Limited

Asm IP Holding B.v.

Kabushiki Kaisha Toshiba

Tohoku University

Other

Kabushiki Kaisha Kobe Seiko Sho

Tokyo Electron Limi Ted

Toshihisa Nozawa

Kiyotaka Ishibashi

Takaaki Matsuoka

Caizhong Tian

Isahiro Hasegawa

Masahide Iwasaki

Junichi Arami

Jun Yoshikawa

Tetsuya Nishizuka

Lee Chen

Keiji Horioka

Jianping Zhao

Merritt Funk

Kohei Kawamura

Tamaki Yuasa

Shinji Komoto

Katsuya Okumura

Tadahiro Ohmi

Haruo Okano

Masaru Sasaki

Koji Kotani

Yasuo Kobayashi

Toshihiko Iwao

Yukimasa Yoshida

Tomohiro Kubota

Shinya Yoshimoto

Satoshi Kaneko

Junichi Kitagawa

Peter Ventzek

Tetsuya Goto

Kazuki Moyama

Zhiying Chen

Hirokazu Ueda

Shinya Nishimoto

Shingo Watanabe

Masahiro Okesaku

Atsutoshi Inokuchi

Mitsuya Utsuno

Kotaro Miyatani

Kouji Tanaka

Seiji Samukawa

Hua Hsuan Chen

Toshiyasu Hori

Naoki Matsumoto

Atsuki Fukazawa

Dai Ishikawa

Koji Kobashi

Jacques Faguet

Makoto Hasegawa

Ryu Nakano

Shinji Kubota

Koichi Miyata

Akinobu Teramoto

Yasushi Yagi

Jun Yamashita

Cai Zhong Tian

Akinori Nakano

Yoshio Ishikawa

Michitaka Aita

Naoki Mihara

Takaya Matsushita

Toshihisa Ozu

Kohei Suzuki

Yoichi Ueda

Takahiro Senda

Nobuhiko Yamamoto

Takehisa Saito

Koji Yamagishi

Hiromi Harada

Shota Yoshimura

Masahiro Yamazaki

Masahiro Horigome

Yusuke Ohsawa

Hiromitsu Kambara

Caiz Hong Tian

Kohei Yamashita

Takuya Kurotori

Osamu Kamikanda

Masahito Hiratsuka

Taichi Fugita

Megan Doppel

Singo Furui

Chuichi Kawamura

Kimihiko Yoshino

Masaji Inoue

Hitomitsu Kambara

Fumihiko Kaji

Munetaka Yamagami

Jun Hashimoto

John Entralgo

Yoshinobu Tanaka

Shigekazu Hirose

Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method

Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

Method of forming structures using a neutral beam

Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.

Substrate processing apparatus having electrostatic chuck and substrate processing method

Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

Plasma device using coaxial waveguide, and substrate treatment method

Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Substrate processing method and apparatus

Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

A film forming apparatus includes: a mounting table configured to place a substrate thereon and to be rotatable around an axis; a unit provided in a first region such that its bottom surface faces the mounting table and having first and second buffer spaces therein; and a flow rate controller that independently controls flow rates of a precursor gas supplied to the first and second buffer spaces. In the bottom surface, the unit includes: an inside injection section including injection ports communicated with the first buffer space and configured to inject the precursor gas supplied to the first buffer space; and an intermediate injection section including injection ports communicated with the second buffer space and configured to inject the precursor gas supplied to the second buffer space. All the first injection ports are provided at a location closer to the axis, as compared to the second injection ports.

Film forming apparatus and shower head

A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.

Method of spacer-defined direct patterning in semiconductor fabrication

A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500 W to 3500 W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Multi-cell resonator microwave surface-wave plasma apparatus

Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Placing bed structure, treating apparatus using the structure, and method for using the apparatus

A wafer processing apparatus includes a controller connected to a first robot and a second robot. The controller controls the first robot so that the wafer is placed on a first load lock stage in such a way that the center of the wafer is shifted from the center of the first load lock stage by a first position shift amount and another wafer is placed on a second load lock stage in such a way that the center of the wafer is shifted from the center of the second load lock stage by a second position shift amount. The controller controls the second robot so that the second robot simultaneously conveys two wafers between the first and second load lock stages, and a first processing stage and a second processing stage.

Wafer processing apparatus, recording medium and wafer conveying method

An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

Methods for manufacturing semiconductor devices

Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Film forming apparatus

Growing community of inventors

Amagasaki, Japan

Toshihisa Nozawa