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Toshihiro Iizuka

USPTO Granted Patents = 13 (Patent Applications = 1)

Average Co-Inventor Count = 2.2

ph-index = 5

Forward Citations = 211(Granted Patents)

Location History:

Kanagawa, JP (2005 - 2013)
Tokyo, JP (2001 - 2020)

Company Filing History:

Renesas Electronics Corporation

5 out of 35,734

Nec Corporation

Nec Electronics Corporation

Years Active: 2001-2020

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10658469 - Semiconductor device including a plurality of nitride semiconductor layers (2020-05-19),

2. 8815678 - Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD) (2014-08-26),

3. 8440521 - Method of manufacturing a semiconductor device (2013-05-14),

4. 8212299 - Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure (2012-07-03),

5. 8188547 - Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes (2012-05-29),

6. 8169013 - Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1) (2012-05-01),

7. 7943475 - Process for manufacturing a semiconductor device comprising a metal-compound film (2011-05-17),

8. 6875667 - Method for forming capacitor (2005-04-05),

9. 6602722 - Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same (2003-08-05),

10. 6596602 - Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD (2003-07-22),

11. 6448597 - DRAM having a stacked capacitor and a method for fabricating the same (2002-09-10),

12. 6338996 - Semiconductor memory device production method (2002-01-15),

13. 6326258 - Method of manufacturing semiconductor device having thin film capacitor (2001-12-04),

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