The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Mar. 29, 2000
Applicant:
Inventor:
Toshihiro Iizuka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
In a semiconductor memory device production method for a semiconductor memory device having a capacitor formed by a high dielectric insulation film and a noble metal upper electrode successively formed on a noble metal lower electrode, the formation of the capacitor is followed by anneal in a gas mixture atmosphere of oxygen concentration of 0 to 5% and nitrogen at temperature of 300 to 400 degrees C. This enables to reduce the leak current at room temperature and suppress leak current increase during a high temperature operation.