Metal-insulator-metal (mim) capacitor having capacitor dielectric material selected from a group consisting of zro2, hfo2, (zrx, hf1-x)o2 (0<x<1), (zry, ti (o<y<1), (hfz, ti-z)o2 (o<z<1) and (zrk, ti1, hfm)o2 (o<k, 1, m<1, k+1+m=1)

Abstract

A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source and drain regions and a capacitor, the capacitor being of a MIM structure and having an upper and a lower metal electrode and a capacitor dielectric film sandwiched therebetween, the capacitor dielectric film being formed of a dielectric material which is selected from the group consisting of ZrO2, Hf92, (Zrx, Hf1-x)O2 (0<x<1), (Zry, Ti1-y)o2 (0<y<1), (Hfz, Ti1-z)92 (0<z<1 and (Zrk, Til, Hfm)o2 (0<k, l, m<1, k+l+m−1), wherein each of the first and second transistors has a refractory metal silicide layer formed over each of the source and drain regions thereof and the lower metal electrode is connected through a metal plug to the refractory metal silicide layer formed over one of the source and drain regions of the second transistor.