The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Jun. 13, 2002
Toshihiro Iizuka, Tokyo, JP;
Tomoe Yamamoto, Tokyo, JP;
Mami Toda, Tokyo, JP;
Shintaro Yamamichi, Tokyo, JP;
Toshihiro Iizuka, Tokyo, JP;
Tomoe Yamamoto, Tokyo, JP;
Mami Toda, Tokyo, JP;
Shintaro Yamamichi, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO, HfO, (Zr, Hf)O(0<x<1), (Zr, Ti)O(0<y<1), (Hf, Ti)O(0<z<1), (Zr,Ti, Hf)O(0<k, l, m<1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile