The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7943475 B1

PDF
Full Text
Expired
Date of Patent:
May. 17, 2011

Filed:

Jan. 04, 2006
Applicants:

Tomoe Yamamoto, Kanagawa, JP;

Toshihiro Iizuka, Kanagawa, JP;

Inventors:

Tomoe Yamamoto, Kanagawa, JP;

Toshihiro Iizuka, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric filmis a metal-compound film having a composition represented by the formula MOCNwherein x, y and z meet the conditions: 0<x, 0.1≦y≦1.25, 0.01≦z and x+y+z=2; and M comprises at least Hf or Zr.


Find Patent Forward Citations

Yamamoto, Tomoe. (2011). Process for manufacturing a semiconductor device comprising a metal-compound film (U.S. Patent No. 7943475). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7943475

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…