The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Apr. 20, 2000
Toshihiro Iizuka, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device such as a semiconductor memory device having a thin film capacitor. The thin film capacitor is formed by sequentially stacking a lower electrode of noble metal, a high dielectric constant insulating film and an upper electrode of noble metal. After forming said capacitor, a first annealing process is performed in an atmosphere including hydrogen and, thereafter, a second annealing process is performed in an atmosphere which does not include hydrogen at a temperature equal to or lower than a temperature of said first annealing process. The first annealing process is performed, for example, in a mixed gas including hydrogen and nitrogen. The second annealing process is performed, for example, in an atmosphere including at least one selected from a group consisting of nitrogen gas, inert gas and oxygen gas.