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For the Inventor, By the Inventor

Tsukuba, Japan

Toshihide Nabatame

This inventor holds 40 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Hitachi, Ltd., Renesas Technology Corp., Rohm Co., Ltd.. Active years: 1994-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihide Nabatame. Retrieved from https://idiyas.com/inventor/toshihide-nabatame

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 47.5


Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 252(Granted Patents)


Location History:

  • Hitachiota, JP (1994)
  • Hitachi, JP (1998 - 2006)
  • Hitachinaka, JP (2007)
  • Chiyoda-ku, JP (2010)
  • Tokyo, JP (2008 - 2012)
  • Tsukuba, JP (2004 - 2019)
  • Ibaraki, JP (2008 - 2022)

Company Filing History:

goldMedal14 out of 42,731 
 
Hitachi, Ltd.
 patents
silverMedal14 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal8 out of 6,021 
 
Rohm Co., Ltd.
 patents
4. 7 out of 575 
 
National Institute for Materials Science
 patents
5. 5 out of 724 
 
Horiba, Ltd.
 patents
6. 3 out of 7,654 
 
Renesas Electronics Corporation
 patents
7. 2 out of 10,904 
 
Tokyo Electron Limited
 patents
8. 1 out of 128 
 
International Superconductivity Technology Center
 patents
9. 1 out of 1,765 
 
National Institute of Advanced Industrial Science and Technology
 patents
where one patent can have more than one assignee

Years Active: 1994-2022

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Areas of Expertise:
Thin-Film Transistor
High-K Dielectric
Semiconductor Device
Ferroelectric Capacitor
Metal Compound Thin Film
Dielectric Element
Electronic Circuit Component
Integrated Circuits
Superconducting Wire
Capacitor Structure
Film Formation
Oxide Superconductor
40 patents (USPTO):Explore Patents
1. 11486843 - Dryness/wetness responsive sensor (2022-11-01),
2. 10290802 - Variable resistance device and method for manufacturing same (2019-05-14),
3. 10267756 - Dryness/wetness responsive sensor having first and second wires spaced 5 nm to less than 20 μm apart (2019-04-23),
4. 9825180 - Thin-film transistor and method for manufacturing same (2017-11-21),
5. 9741864 - Thin-film transistor and method for manufacturing same (2017-08-22),
6. 8759925 - Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film (2014-06-24),
7. 8575038 - Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film (2013-11-05),
8. 8207584 - Semiconductor device and manufacturing method of the same (2012-06-26),
9. 8168547 - Manufacturing method of semiconductor device (2012-05-01),
10. 7820503 - Semiconductor device and manufacturing method of the same (2010-10-26),
11. 7790627 - Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film (2010-09-07),
12. 7772678 - Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen (2010-08-10),
13. 7618855 - Manufacturing method of semiconductor device (2009-11-17),
14. 7586755 - Electronic circuit component (2009-09-08),
15. 7511338 - Semiconductor device and manufacturing method of the same (2009-03-31),

Title: Toshihide Nabatame - Pioneering Inventor from Tsukuba, JP

Introduction: Toshihide Nabatame is a renowned inventor hailing from Tsukuba, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nabatame's recent patents include advancements in renewable energy technologies, artificial intelligence systems, and sustainable materials, showcasing his commitment to creating a more sustainable future.

Career Highlights: With over two decades of experience in research and development, Nabatame has worked with leading tech companies and research institutions to bring cutting-edge solutions to the market. His innovative approach has led to the successful commercialization of several products.

Collaborations: Nabatame has collaborated with top scientists, engineers, and designers from around the world, fostering a culture of innovation and creativity. His partnerships have resulted in the development of revolutionary technologies that have reshaped industries.

Conclusion: Toshihide Nabatame's passion for innovation and his relentless pursuit of excellence have established him as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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