The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
May. 02, 2014
National Institute for Materials Science, Ibaraki, JP;
National Institute for Materials Science, Ibaraki, JP;
Abstract
The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (), a drain electrode (), a semiconductor layer (), a gate electrode (), and an insulating layer (); wherein the semiconductor layer () contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer () is provided with an SiOlayer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiOlayer and the high-permittivity layers are used to control the threshold voltage.