The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
May. 29, 2012
Applicants:
Naoto Umezawa, Ibaraki, JP;
Toyohiro Chikyo, Ibaraki, JP;
Toshihide Nabatame, Ibaraki, JP;
Inventors:
Assignee:
National Institute for Materials Science, Ibaraki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.
Umezawa, Naoto. (2013). Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film (U.S. Patent No. 8575038). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8575038
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile