The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Jan. 13, 2016
Applicant:

National Institute for Materials Science, Ibaraki, JP;

Inventors:

Toshihide Nabatame, Tsukuba, JP;

Tadaaki Nagao, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/105 (2006.01); C23C 16/40 (2006.01); H01L 49/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); C23C 16/40 (2013.01); H01L 27/105 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/00 (2013.01); H01L 45/1233 (2013.01); H01L 45/1616 (2013.01); H01L 49/00 (2013.01);
Abstract

The forming voltage of a variable resistance device used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film is sandwiched between a lower electrode and an upper electrode, an island-shaped/particulate region of amorphous aluminum oxide or aluminum oxycarbide is formed on the metal oxide film. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the variable resistance device, is formed from the beginning under the island-shaped or particulate aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.


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