The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 12, 2008
Kunihiko Iwamoto, Ukyo-Ku, JP;
Koji Tominaga, Minami-ku, JP;
Toshihide Nabatame, Chiyoda-ku, JP;
Tomoaki Nishimura, Kouka, JP;
Kunihiko Iwamoto, Ukyo-Ku, JP;
Koji Tominaga, Minami-ku, JP;
Toshihide Nabatame, Chiyoda-ku, JP;
Tomoaki Nishimura, Kouka, JP;
Abstract
After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NHatmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an Oatmosphere. By annealing the film in an Oatmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.