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For the Inventor, By the Inventor

Kanagawa, Japan

Toshiharu Nagumo

This inventor holds 12 USPTO granted patents and 4 published patent applications. Top assignees: Renesas Electronics Corporation, Globalfoundries Inc., International Business Machines Corporation. Active years: 2015-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiharu Nagumo. Retrieved from https://idiyas.com/inventor/toshiharu-nagumo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 33.3

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Kawasaki, JP (2015)
  • Sagamihara, JP (2016 - 2017)
  • Tokyo, JP (2017)
  • Kanagawa, JP (2015 - 2018)

Company Filing History:

goldMedal11 out of 7,657 
 
Renesas Electronics Corporation
 patents
silverMedal5 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal4 out of 166,409 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2015-2018

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12 patents (USPTO):Explore Patents
1. 10069010 - Semiconductor device having compressively strained channel region and method of making same (2018-09-04),
2. 9589951 - High-electron-mobility transistor with protective diode (2017-03-07),
3. 9564486 - Self-aligned dual-height isolation for bulk FinFET (2017-02-07),
4. 9553131 - Semiconductor device and forming method (2017-01-24),
5. 9362308 - Semiconductor device having finFET structures and method of making same (2016-06-07),
6. 9324790 - Self-aligned dual-height isolation for bulk FinFET (2016-04-26),
7. 9305846 - Device isolation in FinFET CMOS (2016-04-05),
8. 9231105 - Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistor (2016-01-05),
9. 9196715 - Field effect transistor with channel core modified to reduce leakage current and method of fabrication (2015-11-24),
10. 9190505 - Field effect transistor with channel core modified for a backgate bias and method of fabrication (2015-11-17),
11. 9190411 - Retrograde doped layer for device isolation (2015-11-17),
12. 8963259 - Device isolation in finFET CMOS (2015-02-24),

Title: Toshiharu Nagumo: Pioneering Inventor from Kanagawa, JP

Introduction: Toshiharu Nagumo is a renowned inventor hailing from Kanagawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nagumo's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable technology for healthcare monitoring, and sustainable energy solutions for urban environments.

Career Highlights: With over two decades of experience in research and development, Nagumo has held key positions in leading tech companies, driving forward cutting-edge projects and securing multiple patents along the way.

Collaborations: Throughout his career, Nagumo has collaborated with top researchers, engineers, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Toshiharu Nagumo's relentless pursuit of innovation and his passion for creating solutions that positively impact society make him a true visionary in the world of technology and invention.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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