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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190505 B1

PDFFull Text
Date of Patent:
Nov. 17, 2015

Filed:

Dec. 19, 2013

Field effect transistor with channel core modified for a backgate bias and method of fabrication

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Inventors:

Tomohiro Hirai, Kawasaki, JP;

Toshiharu Nagumo, Kawasaki, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Jami M Valentine

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); B82Y 10/00 (2013.01); H01L 29/1087 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/778 (2013.01); H01L 29/785 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 29/0673 (2013.01);
Abstract

A semiconductor device includes a substrate and a source structure and a drain structure formed on the substrate. At least one nanowire structure interconnects the source structure and drain structure and serves as a channel therebetween. A gate structure is formed over said at least one nanowire structure to provide a control of a conductivity of carriers in the channel, and the nanowire structure includes a center core serving as a backbias electrode for the channel.

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Hirai, Tomohiro. (2015). Field effect transistor with channel core modified for a backgate bias and method of fabrication (U.S. Patent No. 9190505). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9190505

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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