The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Dec. 19, 2013
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Inventors:
Tomohiro Hirai, Kawasaki, JP;
Toshiharu Nagumo, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); B82Y 10/00 (2013.01); H01L 29/1087 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/778 (2013.01); H01L 29/785 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 29/0673 (2013.01);
Abstract
A semiconductor device includes a substrate and a source structure and a drain structure formed on the substrate. At least one nanowire structure interconnects the source structure and drain structure and serves as a channel therebetween. A gate structure is formed over said at least one nanowire structure to provide a control of a conductivity of carriers in the channel, and the nanowire structure includes a center core serving as a backbias electrode for the channel.