The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Aug. 17, 2015
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Toshiharu Nagumo, Tokyo, JP;
Takashi Hase, Tokyo, JP;
Kiyoshi Takeuchi, Tokyo, JP;
Ippei Kume, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
Performance of a semiconductor device is improved. The semiconductor device includes a substrate composed of silicon, a semiconductor layer composed of p-type nitride semiconductor provided on the substrate, and a transistor including a channel layer provided on the semiconductor layer. The semiconductor device further includes an n-type source region provided in the channel layer, and an n-type drain region provided in the channel layer separately from the source region in a plan view. Each of the source region and the drain region is in contact with the semiconductor layer.